Pressure Sensor with Testing Device and Related Methods

ABSTRACT

A pressure sensor includes a support body that includes a recess; a substrate coupled to the support body; a dielectric layer coupled between the support body and the substrate; and a pressure sensor circuit of the piezoresistive type or piezoelectric type. The pressure sensor circuit is coupled to the substrate and disposed over the recess. The pressure sensor circuit is configured to bend into the recess when the pressure sensor circuit is subjected to external pressure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/797,773, filed Oct. 30, 2017, which is a divisional of U.S. patentapplication Ser. No. 14/511,346, now U.S. Pat. No. 9,835,515, filed onOct. 10, 2014, all of which applications are hereby incorporated hereinby reference.

TECHNICAL FIELD

The present disclosure relates to the field of electronic devices, and,more particularly, to pressure sensors and related methods.

BACKGROUND

In solid structures, particularly in load-bearing structures of, forexample, bridges, buildings, tunnels, railways, containment walls, dams,embankments, pipelines and underground structures of metropolitantransport lines, and so on, it is important to monitor, in many points,significant parameters, like, for example, pressure, temperature andmechanical stresses. Such monitoring is carried out periodically orcontinuously, and is useful both at the initial stage and during thelifetime of the structure.

For this purpose, an approach in this field includes application ofelectronic monitoring devices based on electronic sensors, capable ofproviding good performance at low cost. Usually, such devices areapplied onto the surface of the structures to be monitored, or insiderecesses already foreseen in the structure and accessible from theoutside.

Such devices are not however able to exhaustively detect the parameterswithin the structure to be monitored, which it may be useful to know inorder to evaluate the quality of the structure, its safety, its ageing,its reaction to variable atmospheric conditions, and so on. Moreover,such devices can only be applied after the structure has been built, andnot while it is being built. Therefore, they are unable to evaluatepossible initial defects.

An approach to these requirements is disclosed in U.S. Pat. No.6,950,767 to Yamashita et al., which provides an electronic monitoringdevice entirely contained, i.e. “buried”, within the material (forexample, reinforced concrete) from which the structure to be monitoredis made. More specifically, the device buried in the structure is anentire system encapsulated in a single container, made up of differentparts, assembled on a substrate, such as integrated circuits, sensors,antenna, capacitors, batteries, memories, control units, and yet more,made in different chips connected together through electricalconnections made with metallic connections.

The system of U.S. Pat. No. 6,950,767 to Yamashita et al. also comprisessub-systems having functions correlated with the power supply, forexample, rectifiers in the case in which it receives energy from theoutside, through electromagnetic waves, or else its own battery forgenerating the power supply internally. It should be observed that amonitoring system intended to be “embedded” initially in a buildingmaterial (for example, liquid concrete, which will then solidify) and tothen remain “buried” in the solid structure, is subjected to criticalconditions, for example, extremely high pressures, which can even be afew hundreds of atmospheres. There are also numerous other causes ofwearing, over time, due, for example, to water infiltration, capable ofdamaging the system.

A potential drawback to systems, such as that disclosed in U.S. Pat. No.6,950,767 to Yamashita et al., derives from the fact that they arecomplex systems, even though they are enclosed in a package, and cantherefore be damaged when facing the operating conditions in which theywork. In particular, the electrical interconnections between the variousparts of the package can be vulnerable.

Moreover, the “window” is provided in the package to allow the sensor todetect the relative parameter can be a weak point for possibleinfiltrations of humidity. Furthermore, a crack or imperfection in thecoating material can allow water to penetrate inside the package andcause short-circuits. In addition to water, other substances, such aspotentially corrosive acids, can also infiltrate. In general, althoughdesigned for the mentioned use, the reliability of systems like that ofU.S. Pat. No. 6,950,767 to Yamashita et al. has a limitation due to thecomplexity of the structure of such systems, although miniaturized.

SUMMARY

Generally speaking, a pressure sensor for positioning within a structuremay comprise a pressure sensor IC comprising a pressure sensor circuitresponsive to bending, and a transceiver circuit coupled to the pressuresensor circuit. The pressure sensor may include a support body having arecess therein coupled to the pressure sensor IC so that the pressuresensor IC bends into the recess when the pressure sensor IC is subjectedto external pressure.

More specifically, the pressure sensor IC may include electricallyconductive antenna traces coupled to the transceiver circuit forreceiving radio frequency (RF) energy. For example, the recess may betrapezoidal in shape.

In some embodiments, the pressure sensor may further comprise a glassfrit bonding layer between the pressure sensor IC and the support body.Also, the support body may comprise a first layer defining the recessand comprising additional electrically conductive antenna traces coupledto the transceiver circuit, and a second layer adjacent the first layer.

In other embodiments, the pressure sensor may further comprise at leastone substrate adjacent the pressure sensor IC and comprising additionalelectrically conductive antenna traces coupled to the transceivercircuit. The at least one substrate may comprise a flexible substrateextending laterally outwardly from the pressure sensor IC. Theadditional electrically conductive antenna traces may surround thepressure sensor IC. The support body may comprise at least one of aceramic material, a glass material, or a silicon material, for example.

Another aspect is directed to a testing device for at least one pressuresensor under test. The at least one pressure sensor under test is to bepositioned within a structure and may comprise a pressure sensor ICcomprising a pressure sensor circuit responsive to bending, and atransceiver circuit coupled to the pressure sensor circuit, and asupport body having a recess therein coupled to the pressure sensor IC.The testing device may include a probe chuck configured to applypressure to the support body of the at least one pressure sensor undertest, and a wireless card configured to apply pressure to the pressuresensor IC of the at least one pressure sensor under test, and generateRF energy to activate the at least one pressure sensor under test.

The at least one pressure sensor under test may comprise a plurality ofpressure sensors under test, and the testing device may further comprisea joint coupled to the wireless card and configured to position thewireless card adjacent a respective pressure sensor under test. In someembodiments, the wireless card may comprise a rigid press configured toapply the pressure to the pressure sensor IC of the at least onepressure sensor under test, electrically conductive antenna tracesconfigured to generate the RF energy to activate the at least onepressure sensor under test, and a substrate coupled to the rigid pressand carrying the electrically conductive antenna traces.

Moreover, the rigid press and the substrate may be integral.Alternatively, the rigid press and the substrate may be laterally spacedapart. In some embodiments, the rigid press may have a curved surface.The testing device may further comprise a deformable layer between thewireless card and the at least one pressure sensor.

A method is for making a pressure sensor for positioning within astructure. The method may include providing a pressure sensor ICcomprising a pressure sensor circuit responsive to bending, and atransceiver circuit coupled to the pressure sensor circuit. The methodmay include forming a support body to have a recess therein coupled tothe pressure sensor IC so that the pressure sensor IC bends into therecess when the pressure sensor IC is subjected to external pressure.

Another aspect is directed to a method of operating a testing device forat least one pressure sensor under test. The at least one pressuresensor under test may be positioned within a structure and comprising apressure sensor IC comprising a pressure sensor circuit responsive tobending, and a transceiver circuit coupled to the pressure sensorcircuit, and a support body having a recess therein coupled to thepressure sensor IC. The method may include using a probe chuck of thetesting device to apply pressure to the support body of the at least onepressure sensor under test, and using a wireless card of the testingdevice to apply pressure to the pressure sensor IC of the at least onepressure sensor under test, and generate RF energy to activate the atleast one pressure sensor under test.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a cross-sectional view of the pressuresensor, according to the present disclosure.

FIG. 2 is a schematic diagram of a cross-sectional view of anotherembodiment of the pressure sensor, according to the present disclosure.

FIG. 3 is a schematic diagram of a cross-sectional view of yet anotherembodiment of the pressure sensor, according to the present disclosure.

FIG. 4 is a schematic diagram of a cross-sectional view of anotherembodiment of the pressure sensor, according to the present disclosure.

FIG. 5 is a schematic diagram of a top plan view of the pressure sensorof FIG. 4.

FIG. 6 is a schematic diagram of a top plan view of another embodimentof the pressure sensor of FIG. 4.

FIGS. 7 and 8 are schematic diagrams of top plan views of embodiments ofthe pressure sensors at a wafer level, according to the presentdisclosure.

FIGS. 9A and 9B are schematic diagrams of cross-sectional views of atesting device for a pressure sensor, according to the presentdisclosure.

FIG. 10 is a schematic diagram of a cross-sectional view of anotherembodiment of the testing device, according to the present disclosure.

FIG. 11 is a schematic diagram of a cross-sectional view of anotherembodiment of the testing device, according to the present disclosure.

FIG. 12 is a schematic diagram of a cross-sectional view of anotherembodiment of the testing device, according to the present disclosure.

FIG. 13 is a schematic diagram of a cross-sectional view of anotherembodiment of the testing device, according to the present disclosure.

FIG. 14 is a schematic diagram of a cross-sectional view of anotherembodiment of the testing device, according to the present disclosure.

FIG. 15 is a schematic diagram of a cross-sectional view of yet anotherembodiment of the testing device, according to the present disclosure.

FIG. 16 is a schematic diagram of another cross-sectional view of thetesting device of FIG. 14.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The present disclosure will now be described more fully hereinafter withreference to the accompanying drawings, in which several embodiments ofthe present disclosure are shown. This present disclosure may, however,be embodied in many different forms and should not be construed aslimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete, andwill fully convey the scope of the present disclosure to those skilledin the art. Like numbers refer to like elements throughout, and primenotation is used to indicate similar elements in alternativeembodiments.

Referring initially to FIG. 1, a pressure sensor 20 according to thepresent disclosure is now described. The pressure sensor 20 is forpositioning within a structure. For example, as discussed hereinabove,the pressure sensor 20 may be embedded into concrete substructuresduring construction. The pressure sensor 20 illustratively includes apressure sensor IC 21 comprising a pressure sensor circuit 22 (e.g.piezoresistive or piezoelectric pressure sensor circuitry) responsive tobending, and a transceiver or transponder circuit 23 coupled to thepressure sensor circuit (illustratively spaced apart from the pressuresensor circuit 22, but may be integrated with the pressure sensorcircuit in some embodiments). The pressure sensor IC 21 illustrativelyincludes a substrate 28 carrying the pressure sensor and transceivercircuits 22, 23, and a dielectric layer 29 on the substrate. Thepressure sensor IC 21 may have a thickness of 100 microns, for example,to measure high pressure, for example, 500 atmospheres or more.

The pressure sensor 20 illustratively includes a support body 25 havinga recess 26 therein coupled to the pressure sensor IC 21 so that thepressure sensor IC bends or deforms into the recess when the pressuresensor IC is subjected to external pressure. Also, the pressure sensorIC 21 illustratively includes electrically conductive antenna traces 24a-24 b coupled to the transceiver circuit 23 for receiving RF energy, ormore in general electromagnetic waves, and being carried by thedielectric layer 29. Advantageously, the dielectric layer 29 insulatesthe electrically conductive antenna traces 24 a-24 b and reduceselectromagnetic losses that would occur if they are close/adjacent tothe building material (e.g. concrete).

In the illustrated embodiment, the recess 26 is trapezoidal in shape,but other shapes are possible, such as a rectangle or circular shapes.Advantageously, the recess 26 enhances the deformation of the pressuresensor IC 21 due to the applied force by increasing the variation of theparameters of the piezoresistive or piezoelectric elements in thepressure sensor IC. The recess 26 is sealed from the externalenvironment to protect the pressure sensor and transceiver circuits 22,23. Also, since the sealed recess pressure is substantially less thanthe external pressure in the structure, the pressure sensor IC 21 willbend or bow (shown with dashed lines) into the recess 26.

The support body 25 may comprise at least one of a ceramic material, aglass material, and a silicon material, for example. In someembodiments, the support body 25 is made with material having a Young'smodulus similar to silicon (or other semiconductor material). Inaddition, this material may be an insulator considering the presence ofthe electrically conductive antenna traces 24 a-24 b integrated in thepressure sensor IC 21. In embodiments where the support body 25comprises silicon, the silicon may have a high resistivity, for example,it may not be doped (intrinsic semiconductor), to reduce power loss dueto Eddy currents.

A method is provided for making a pressure sensor 20 for positioningwithin a structure. The method may include providing a pressure sensorIC 21 comprising a pressure sensor circuit 22 responsive to bending, anda transceiver circuit 23 coupled to the pressure sensor circuit. Themethod may include forming a support body 25 to have a recess 26 thereincoupled to the pressure sensor IC 21 so that the pressure sensor ICbends into the recess when the pressure sensor IC is subjected toexternal pressure.

Generally, the method may include making a plurality of the pressuresensors 20 on a semiconductor wafer, testing each of the pressuresensors, and forming the recesses 26 for the pressure sensors. Theformation of the recesses 26 may be performed using etching, drilling,or a laser, for example.

Referring now additionally to FIG. 2, another embodiment of the pressuresensor 20′ is now described. In this embodiment of the pressure sensor20′, those elements already discussed above with respect to FIG. 1 aregiven prime notation and most require no further discussion herein. Thisembodiment differs from the previous embodiment in that this pressuresensor 20′ further comprises a glass frit bonding layer 27′ between thepressure sensor IC 21′ and the support body 25′. In this embodiment, thepressure sensor IC 21′ is singulated before placement on the supportbody 25′. The glass frit bonding layer 27′ can be replaced with aninsulating layer to reduce Eddy currents and improve performance.

Referring now additionally to FIG. 3, another embodiment of the pressuresensor 20″ is now described. In this embodiment of the pressure sensor20″, those elements already discussed above with respect to FIG. 1 aregiven double prime notation and most require no further discussionherein. This embodiment differs from the previous embodiment in thatthis pressure sensor 20″ illustratively includes the support body 25″comprising a first layer 31″ defining the recess 26″, and a second layer32″ adjacent the first layer. The first layer 31″ comprises additionalelectrically conductive antenna traces 33 a″-33 b″ coupled to anexternal system (not shown) and electromagnetically coupled toelectrically conductive antenna traces 24 a″-24 b″. An example of theexternal system is disclosed in United States Patent ApplicationPublication No. 2013/0342186 to Pagani et al., assigned to the presentapplication's assignee, the contents of which are hereby incorporated byreference in their entirety. The multilayer support body 25″ maycomprise a ceramic material, for example, since it includes theadditional electrically conductive antenna traces 33 a″-33 b″. In thisembodiment, since the pressure sensor 20″ is rigid, the buildingmaterial that surrounds the pressure sensor 20′″ after placement willapply equalized pressure throughout the pressure sensor.

Referring now additionally to FIGS. 4-5, another embodiment of thepressure sensor 20′″ is now described. In this embodiment of thepressure sensor 20′″, those elements already discussed above withrespect to FIG. 1 are given triple prime notation and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this pressure sensor 20′″ illustratively includes asubstrate 34 a′″-34 b′″ surrounding the pressure sensor IC 21′″ anddefining a gap 67′ therebetween. The substrate 34 a′″-34 b′″ comprises adielectric layer 35 a′″-35 b′″, and additional electrically conductiveantenna traces 36 a′″-36 b′″ electromagnetically coupled to theelectrically conductive antenna traces 24 a′″-24 b′″ that areelectrically coupled to the transceiver circuit 23′″.

The substrate 34 a′″-34 b′″ may comprise a flexible substrate extendinglaterally outwardly from the pressure sensor IC 21′″. In thisembodiment, the additional electrically conductive antenna traces 36a′″-36 b′″ illustratively surround the pressure sensor IC 21′″, and thesubstrate 34 a′″-34 b′″ surrounds the pressure sensor IC. In thisembodiment, when the substrate 34 a′″-34 b′″ comprises a flexiblematerial with a lower Young's modulus, the building material thatsurrounds the pressure sensor 20′″ will apply concentrated pressure onthe pressure sensor IC 21′″, thereby increasing the variation of thepiezoresistive or piezoelectric element therein.

Referring now additionally to FIG. 6, another embodiment of the pressuresensor 20″″ is now described. In this embodiment of the pressure sensor20″″, those elements already discussed above with respect to FIGS. 4-5are given quadruple prime notation and most require no furtherdiscussion herein. This embodiment differs from the previous embodimentin that this pressure sensor 20″″ illustratively includes the supportbody 25″″ extending outwardly (substantially perpendicular to thesubstrate) and beyond the substrate 34″″. The electrically conductiveantenna traces 24 a″″-24 b″″ extend between ends of the support body25″″ and are arranged in opposing first and second loops (for example,square shaped in the illustrated embodiment). The first loop is within asimilar loop defined by the additional electrically conductive antennatraces 36 a″″-36 b″″, and the second loop surrounds the pressure sensorIC 21″″.

Referring now additionally to FIGS. 7 and 8, circle-shaped andsquare-shaped wafers 37, 38 comprising a plurality of pressure sensors20 a-20 d are shown. Advantageously, the pressure sensors 20 a-20 d maybe manufactured with wafer level processing techniques. Other wafershapes are possible, such as a rectangle-shape or a polygon-shape.

Referring now additionally to FIGS. 9A-9B, a testing device 40 accordingto the present disclosure is now described. The testing device 40 is fortesting one or more pressure sensors 20 a-20 c, i.e. there is at leastone pressure sensor under test. The pressure sensors 20 a-20 c undertest in the illustrated embodiment are similar to the pressure sensordisclosed in FIG. 1, but it should be appreciated that other pressuresensors could be tested with the testing device 40.

The testing device 40 illustratively includes a probe chuck 41configured to apply pressure to the support body 25 a-25 c of thepressure sensors 20 a-20 c under test, and a wireless card 44 configuredto apply pressure to the pressure sensor IC 21 a-21 c of the pressuresensors under test, and generate RF energy to activate the pressuresensors under test. The wireless card 44 is coupled to Automatic TestEquipment (ATE) (not shown), and the probe chuck 41 may be part ofprober equipment (not shown).

In this illustrated embodiment, the wireless card 44 illustrativelyincludes a base 46, and a plurality of rigid presses 45 a-45 c forapplying pressure respectively to the pressure sensor ICs 21 a-21 c. Asperhaps best seen in FIG. 9B, the probe chuck 41 illustratively includesa base 43, and a rigid substrate 42 applying upward force 64 onto thesupport bodies 25 a-25 c of the pressure sensors 20 a-20 c. In someembodiments, the wireless card 44 may comprise a plurality of load cellsbetween the base 46, and respectively the plurality of rigid presses 45a-45 c. The load cells are for measuring the pressure exerted on thepressure sensor ICs 21 a-21 c of the pressure sensors 20 a-20 c undertest. Although not shown, the rigid presses 45 a-45 c includes aplurality of electrically conductive antenna traces for activating thepressure sensors 20 a-20 c under test and exchanging information withthem. Also, the rigid presses 45 a-45 c may comprise the same materialused for the support body 25.

During testing, the wireless card 44 activates the pressure sensors 20a-20 c under test with RF energy. The pressure sensors 20 a-20 c undertest transmit a detected pressure value, and the testing device 40compares the received value with the known pressure exerted by the probechuck 41. Moreover, the probe chuck 41 has a regulated known temperaturevalue and this can also be varied during testing.

Another aspect is directed to a method of operating a testing device 40for at least one pressure sensor 20 a-20 c under test. The at least onepressure sensor under test 20 a-20 c may be positioned within astructure and comprising a pressure sensor IC 21 a-21 c comprising apressure sensor circuit 22 responsive to bending, and a transceivercircuit 23 coupled to the pressure sensor circuit, and a support body 25a-25 c having a recess 26 a-26 c therein coupled to the pressure sensorIC. The method may include using a probe chuck 41 of the testing device40 to apply pressure to the support body 25 a-25 c of the at least onepressure sensor 20 a-20 c under test, and using a wireless card 44 ofthe testing device to apply pressure to the pressure sensor IC 21 a-21 cof the at least one pressure sensor under test, and generate RF energyto activate the at least one pressure sensor under test.

Referring now additionally to FIG. 10, another embodiment of the testingdevice 40′ is now described. In this embodiment of the testing device40′, those elements already discussed above with respect to FIGS. 9A-9Bare given prime notation and most require no further discussion herein.This embodiment differs from the previous embodiment in that thistesting device 40′ has the probe chuck 41′ illustratively includes aload cell 48′ between the base 43′ and the rigid substrate 42′.

Also, the testing device 40′ illustratively includes a joint 47′ coupledto the wireless card 44′ and configured to position the wireless cardadjacent a respective pressure sensor under test 20 a′-20 c′. In someembodiments, the joint 47′ may comprise a ball joint to ensure the rigidpress 45′ and the pressure sensor IC 21 a′-21 c′ have parallel surfaces,thereby avoiding systematic measurement errors.

Referring now additionally to FIG. 11, another embodiment of the testingdevice 40″ is now described. In this embodiment of the testing device40″, those elements already discussed above with respect to FIGS. 9A-9Bare given double prime notation and most require no further discussionherein. This embodiment differs from the previous embodiment in thatthis testing device 40″ is testing a pressure sensor 20″ that is avariant of the pressure sensor 20″ of FIG. 3. This pressure sensor 20″illustratively includes a support body 25″ that is elongate and extendslaterally away from the pressure sensor IC 21″ and comprises additionalelectrically conductive antenna traces 33 a″-33 d″ extendingtherethrough.

In this embodiment, the wireless card 44″ illustratively includes arigid press 45″ configured to apply the pressure to the pressure sensorIC 21″ of the pressure sensor 20″ under test, electrically conductiveantenna traces 50 a″-50 b″ configured to generate the RF energy toactivate the pressure sensor under test, and a substrate 49″ coupled tothe rigid press and carrying the electrically conductive antenna traces.The rigid press 45″ and the substrate 49″ are laterally spaced apart soas to accurately apply pressure and RF energy to activate electricallyconductive antenna traces throughout the pressure sensor 20″.

Referring now additionally to FIG. 12, another embodiment of the testingdevice 40′ is now described. In this embodiment of the testing device40′″, those elements already discussed above with respect to FIGS. 9A-9Bare given triple prime notation and most require no further discussionherein. This embodiment differs from the previous embodiment in thatthis testing device 40′″ combines the substrate and rigid press in acombined structure 49′″, i.e. the rigid press and the substrate areintegral. In this embodiment, the substrate 49+″ may be formed from amultilayer structure of ceramic material. Advantageously, the substrate49′″ can support electrically conductive vias to couple the electricallyconductive antenna traces 50 a′″-50 b′″ yet provide a firm/strong(Young's modulus is sufficient) enough structure to apply appropriatepressure. Also, the substrate 49′″ can apply pressure to the pressuresensor IC 21′″ on the opposite side of the circuitry, thereby reducingthe chances of damaging it.

Referring now additionally to FIG. 13, another embodiment of the testingdevice 40″″ is now described. In this embodiment of the testing device40″″, those elements already discussed above with respect to FIGS. 9A-9Bare given quadruple prime notation and most require no furtherdiscussion herein. This embodiment differs from the previous embodimentin that this testing device 40″″ illustratively includes a substrate 49a″″-49 b″″ surrounding the rigid press 45″″.

Referring now additionally to FIGS. 14 and 16, another embodiment of thetesting device 40′″″ is now described. In this embodiment of the testingdevice 40′″″, those elements already discussed above with respect toFIGS. 9A-9B are given quintuple prime notation and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this testing device 40′″″ illustratively includes adeformable layer 65′″″ between the wireless card 44′″″ and the pressuresensors 20 a′″″-20 c′″″ under test. The deformable layer 65′″″ maycomprise one or more of Kapton, Teflon, a foil layer, or a paper layerand may insure equal and event contact.

Referring now additionally to FIG. 15, another embodiment of the testingdevice 40″″″ is now described. In this embodiment of the testing device40″″″, those elements already discussed above with respect to FIGS.9A-9B are given sextuple prime notation and most require no furtherdiscussion herein. This embodiment differs from the previous embodimentin that this testing device 40″″″ illustratively includes a curvedsurface 51″″″. The curved surface 51″″″ applies a stress that is incorrespondence to the shape of the recess 26″″″. The curved surface51″″″ may comprise the same material used for the rigid press 45″″″ or amaterial having a Young's modulus less than the material used for therigid press 45″″″.

Many modifications and other embodiments of the present disclosure willcome to the mind of one skilled in the art having the benefit of theteachings presented in the foregoing descriptions and the associateddrawings. Therefore, it is understood that the present disclosure is notto be limited to the specific embodiments disclosed, and thatmodifications and embodiments are intended to be included within thescope of the appended claims.

What is claimed is:
 1. A pressure sensor comprising: a support bodycomprising a recess; a substrate coupled to the support body; adielectric layer coupled between the support body and the substrate; anda pressure sensor circuit of the piezoresistive type or piezoelectrictype, the pressure sensor circuit coupled to the substrate and disposedover the recess, wherein the pressure sensor circuit is configured tobend into the recess when the pressure sensor circuit is subjected toexternal pressure.
 2. The pressure sensor of claim 1, wherein the recesscomprises a bottom surface that is planar, the bottom surface of therecess having a first width measured in a first direction parallel to atop surface of the support body, and wherein the pressure sensor circuithas a second width measured in the first direction, the second widthbeing smaller than the first width.
 3. The pressure sensor of claim 1,wherein the recess comprises slanted walls and a planar bottom surface.4. The pressure sensor of claim 3, where the pressure sensor circuit hasa first width from a first edge of the pressure sensor circuit to asecond edge of the pressure sensor circuit, the first width measured ina direction parallel to a top surface of the support body, and whereinthe first and second edges are disposed over the planar bottom surfaceof the recess.
 5. The pressure sensor of claim 1, wherein the pressuresensor circuit is of the piezoresistive type.
 6. The pressure sensor ofclaim 1, further comprising a bonding layer coupled between thedielectric layer and the support body.
 7. The pressure sensor of claim6, wherein the bonding layer is a glass frit bonding layer.
 8. Thepressure sensor of claim 1, wherein the support body comprises silicon.9. The pressure sensor of claim 1, wherein the recess has a trapezoidalshape.
 10. The pressure sensor of claim 1, further comprising aconductive trace disposed in the dielectric layer.
 11. The pressuresensor of claim 10, further comprising a transceiver circuit coupled tothe conductive trace.
 12. The pressure sensor of claim 10, wherein theconductive trace is partially disposed over the recess.
 13. A pressuresensor comprising: a support body comprising a recess; a substratecoupled to the support body; a bonding layer bonding the support bodyand the substrate; and a pressure sensor circuit of the piezoresistivetype coupled to the substrate and disposed over the recess, wherein thepressure sensor circuit is configured to bend into the recess when thepressure sensor circuit is subjected to external pressure, wherein therecess comprises a bottom surface that is planar, the bottom surface ofthe recess having a first width measured in a first direction parallelto a top surface of the support body, and wherein the pressure sensorcircuit has a second width measured in the first direction, the secondwidth being smaller than the first width.
 14. The pressure sensor ofclaim 13, wherein the bonding layer is a glass frit bonding layer. 15.The pressure sensor of claim 13, further comprising a dielectric layercoupled between the support body and the substrate and having conductivetrace.
 16. The pressure sensor of claim 15, further comprising atransceiver circuit coupled to the conductive trace.
 17. A pressuresensor comprising: a support body comprising a recess, the recesscomprising slanted walls and a planar bottom surface; a substratecoupled to the support body; a dielectric layer coupled between thesupport body and the substrate; and a pressure sensor circuit of thepiezoresistive type coupled to the substrate and disposed over therecess, wherein the pressure sensor circuit is configured to bend intothe recess when the pressure sensor circuit is subjected to externalpressure.
 18. The pressure sensor of claim 17, further comprising aconductive trace disposed in the dielectric layer.
 19. The pressuresensor of claim 18, further comprising a transceiver circuit coupled tothe conductive trace.
 20. The pressure sensor of claim 17, wherein thesupport body comprises a ceramic material.